BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS635AB
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
10
DC Operation
1·0
0·1
BD249
OBSOLETE 0·01
1·0
BD249A
BD249B
BD249C
10
100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
140
TIS635AA
120
100
80
60
40
20
0
0
25
50
75
100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.