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Part Name
Description
MJE13009 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MJE13009
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
ON Semiconductor
MJE13009 Datasheet PDF : 10 Pages
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MJE13009
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
5V
P
W
DUTY CYCLE
≤
10%
68
t
r
, t
f
≤
10 ns
+5 V
0.001
m
F
1N4933
33
MJE210
33 1N4933
2N2222
1
k
1
+5 Vk
R
B
I
B
V
CC
L
I
C
1N4933
NOTE
0.02
m
F
270
PW and V
CC
Adjusted for Desired I
C
R
B
Adjusted for Desired I
B1
1k
2N2905
47
100
1/2 W
D.U.T.
MJE200
− V
BE(off)
MR826*
V
clamp
*SELECTED FOR
≥
1 kV
5.1 k
V
CE
51
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200
m
H/20 A
L
coil
= 200
m
H
I
C
I
CM
t
1
V
CE
V
CEM
TIME
OUTPUT WAVEFORMS
t
f
CLAMPED
t
f
UNCLAMPED
≈
t
2
t
t
f
t
1
ADJUSTED TO
OBTAIN I
C
t
1
≈
L
coil
(I
CM
)
V
CC
V
clamp
t
2
t
2
≈
L
coil
(I
CM
)
V
clamp
V
CC
= 20 V
V
clamp
= 300 Vdc
Test Equipment
Scope−Tektronics
475 or Equivalent
RESISTIVE
SWITCHING
+125 V
R
C
TUT
R
B
SCOPE
D1
−4.0
V
V
CC
= 125 V
R
C
= 15
W
D1 = 1N5820 or Equiv.
R
B
=
W
+10 V
25
m
s
0
−8 V
t
r
, t
f
< 10 ns
Duty Cycle = 1.0%
R
B
and R
C
adjusted
for desired I
B
and I
C
http://onsemi.com
5
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