TIP135 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

TIP135

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

TIP135

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB=B -16mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A, IB=B -30mA

VBE(on) Base-Emitter On Voltage

IC= -4A; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -60V, IE= 0

ICEO

Collector Cutoff Current

VCE= -30V, IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -4V

hFE-2

DC Current Gain

IC= -4A; VCE= -4V

MIN

MAX UNIT

-60

V

-2.0

V

-3.0

V

-2.5

V

-0.2

mA

-0.5

mA

-5

mA

500

1000 15000

isc Website：www.iscsemi.cn

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