DMG1016VQ View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
DMG1016VQ Datasheet PDF : 9 Pages
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DMG1016VQ
Typical Characteristics (Q2 P-Channel) (Continued)
1.6
1.0
1.2
0.8
ID = -1mA
ID = -250µA
0.4
0.8
TA = 25°C
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
100
Ciss
10
Coss
Crss
0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 19 Diode Forward Voltage vs. Current
1,000
TA = 150°C
100
TA = 125°C
10
TA = 85°C
1
0
5
10
15
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Total Capacitance
1
D = 0.7
D = 0.5
D = 0.3
TA = 25°C
1
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
DMG1016VQ
Document number: DS37972 Rev. 2 - 2
D = 0.9
RJA(t) = r(t) * RJA
RJA = 260°C/W
P(pk)
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (s)
Fig. 22 Transient Thermal Response
7 of 9
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1,000
September 2015
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