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MITSUBISHI Nch POWER MOSFET
FS3KMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to case
Min.
250
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
3.0
1.5
2.25
2.5
300
35
8
15
10
45
20
1.5
—
Max.
—
±0.1
1
4.0
2.0
3.0
—
—
—
—
—
—
—
—
2.0
5.0
Unit
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
VGS = 20V
4
10V
TC = 25°C
Pulse Test
3
8V
6V
2
5V
PD = 25W
1
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
7
5
3
2
101
7
5
3
2
100
7
5
3
2 TC = 25°C
Single Pulse
10–1
7
2 3 5 7 101
23
5 7 102
tw =
10µs
100µs
1ms
10ms
DC
23 5
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
VGS = 20V
10V
6V 8V
1.2
5V
0.8
0.4
4V
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
Jan. 2000