2N3791 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2N3791 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter
sustaining voltage
2N3791
2N3792
CONDITIONS
IC=-0.2A ;IB=0
VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBE(on)-1 Base-emitter on voltage
IC=-5A ; VCE=-2V
VBE(on)-2 Base-emitter on voltage
ICEX
Collector
cut-off current
2N3791
2N3792
IEBO
Emitter cut-off current
IC=-10A ; VCE=-4V
VCE=-60V; VBE(off)=-1.5V
TC=150℃
VCE=-80V; VBE(off)=-1.5V
TC=150℃
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
fT
Transition frequency
IC=-0.5A;VCE=-10V
Product Specification
2N3791 2N3792
MIN TYP. MAX UNIT
-60
V
-80
V
-1.0
V
-1.8
V
-4.0
V
-1.0
-5.0
mA
-1.0
-5.0
mA
-5.0
mA
50
180
30
4
MHz
2
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