BC846AW View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
Manufacturer
BC846AW Datasheet PDF : 4 Pages
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
NPN
BC846W , 847W, 848W
SOT-323
Formed SMD Package
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
hFE
IC=2mA, VCE=5V
BC846W
BC847W,BC848W
BC846AW,BC847AW
BC846BW,BC847BW
BC847CW
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCE (sat)
VBE (sat)
IC=10mA, IB=0.5mA
*IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
*IC=100mA, IB=5mA
Base Emitter On Voltage
VBE (on)
IC=2mA, VCE=5V
Collector Capacitance
IC=10mA, VCE=5V
Cc
IE=ie=0, VCB=10V, f=1MHz
Transition Frequency
Noise Figure
**Pulse test tp=300µs, δ < 0.02
fT
IC=10mA, VCE=5V,f=100MHz
NF
IC=0.2mA, VCE=5V
Rs=2kΩ, f=1KHz, B=200Hz
MIN TYP MAX UNITS
110
450
110
800
110
220
200
450
520
800
0.25
0.60
0.7
0.9
0.58
0.70
0.77
3.0
100
10
V
V
V
V
V
V
pF
MHz
dB
BC846W_BC848W Rev170210E
Continental Device India Limited
Data Sheet
Page 2 of 4
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