DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BC847AW View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BC847AW
Philips
Philips Electronics 
BC847AW Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
NPN general purpose transistors
Product specification
BC846W; BC847W
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SC70; SOT323 plastic package.
PNP complements: BC856W and BC857W.
MARKING
TYPE
NUMBER
BC846W
BC846AW
BC846BW
BC847W
MARKING TYPE
CODE(1) NUMBER
1DBC847AW
1A
BC847BW
1B
BC847CW
1H
MARKING
CODE(1)
1E
1F
1G
Note
1. = - : Made in Hong Kong.
= t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM062
Fig.1 Simplified outline (SC70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC846W
BC847W
collector-emitter voltage
BC846W
BC847W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23
2
MIN.
MAX.
UNIT
80
V
50
V
65
V
45
V
5
V
100
mA
200
mA
200
mA
200
mW
65
+150
°C
150
°C
65
+150
°C

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]