Philips Semiconductors
NPN general purpose transistors
Product specification
BC846W; BC847W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SC70; SOT323 plastic package.
PNP complements: BC856W and BC857W.
MARKING
TYPE
NUMBER
BC846W
BC846AW
BC846BW
BC847W
MARKING TYPE
CODE(1) NUMBER
1D∗ BC847AW
1A∗
BC847BW
1B∗
BC847CW
1H∗
MARKING
CODE(1)
1E∗
1F∗
1G∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM062
Fig.1 Simplified outline (SC70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC846W
BC847W
collector-emitter voltage
BC846W
BC847W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23
2
MIN.
MAX.
UNIT
−
80
V
−
50
V
−
65
V
−
45
V
−
5
V
−
100
mA
−
200
mA
−
200
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C