D45VH4 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

D45VH4

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

D45VH Series

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

D45VH 1

-30

Collector-Emitter

VcEO(SUS) Sustaining Voltage

D45VH 4

D45VH 7

lc=-25mA;lB=0

-45

V

-60

D45VH10

-80

VcE(sat)-1 Collector-Emitter Saturation Voltage IC=-8A;IB=-0.8A

VcE(sat)-2

VaE(sat)

ICEV

Collector-Emitter Saturation Voltage lc=-15A;lB=-3A;Tc=100t:

Base-Emitter Saturation Voltage

Collector Cutoff Current

IC=-8A;IB=-0.8A

IC=-8A;IB=-0.8A;TC=100°C

VCE=RatedVCE;VBE(om=-4V

VcE=RatedVCE;VsE<om=-4V;Tc=100°C

IEBO

Emitter Cutoff Current

VEB= -7V; lc= 0

-1.0

V

-1.5 V

-1.0

-1.5

V

-10

-100

uA

-10

uA

hpE-1 DC Current Gain

lc=-2A;VCE=-1V

35

llFE-2

DC Current Gain

|C=-4A;VCE=-1V

20

COB Output Capacitance

lE=0;VCB=-10V,fte5t= 1.0MHz

fr

Current-Gain—Bandwidth Product lc= 0.1A;VcE= -10V;f,esr 20MHz

275

PF

50

MHz

Switching Times

td

Delay Time

50

ns

tr

Rise Time

t.

Storage Time

tf

Fall Time

lc=-8A; lBi=-ls2=-0.8A

Vcc= -20V

250 ns

700 ns

90

ns

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