BST62 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
BST62 Datasheet PDF : 8 Pages
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NXP Semiconductors
PNP Darlington transistors
Product data sheet
BST60; BST61; BST62
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICES
IEBO
hFE
VCEsat
VBEsat
fT
collector-emitter cut-off current
BST60
BST61
BST62
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
VBE = 0 V; VCE = −45 V
VBE = 0 V; VCE = −60 V
VBE = 0 V; VCE = −80 V
IC = 0 A; VEB = −4 V
VCE = −10 V; note 1; see Fig.2
IC = −150 mA
IC = −500 mA
IC = −500 mA; IB = −0.5 mA
IC = −500 mA; IB = −0.5 mA;
Tj = 150 °C
IC = −500 mA; IB = −0.5 mA
IC = −500 mA; VCE = −5 V;
f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
toff
turn-off time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
MIN. TYP. MAX. UNIT
−
−
−50 nA
−
−
−50 nA
−
−
−50 nA
−
−
−50 nA
1000 −
2000 −
−
−
−
−
−
−
−1.3 V
−1.3 V
−
−
−1.9 V
−
200 −
MHz
−
500 −
ns
−
700 −
ns
2004 Dec 09
4
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