2SC4116 View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
Manufacturer
2SC4116 Datasheet PDF : 4 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SC4116
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown
voltage
V(BR)CBO IC=100μA,IE=0
60
V
Collector-emitter breakdown
voltage
V(BR)CEO IC=1mA,IB=0
50
V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1 μA
DC current gain
Collector-emitter saturation
voltage
Transition frequency
hFE
VCE=6V,IC=2mA
VCE(sat)
ICE=100mA,IB=10mA
fT
VCE=10V, IC= 1mA
70
700
0.1 0.25 V
80
MHz
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
O
Range
70-140
Marking
LO
VCB=10V,IE=0,f=1MHz
Y
120-240
LY
GR
200-400
LG
2.0 3.5 pF
BL
350-700
LL
F038
Rev.A
www.gmicroelec.com
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