K15N60HS(2006) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

K15N60HS
(Rev.:2006)

High Speed IGBT in NPT-technology

Infineon Technologies 

SKB15N60HS

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400ns

300ns

IF=30A

200ns

IF=15A

100ns

200A/µs

400A/µs

600A/µs

IF=7.5A

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

1,5µC

1,0µC

0,5µC

IF=30A

IF=15A

IF=7.5A

0,0µC

200A/µs

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current

slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

IF=30A IF=15A

15A

-300A/µs

IF=7.5A

10A

-200A/µs

5A

0A

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current

slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

-100A/µs

-0A/µs

200A/µs

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

Power Semiconductors

10

Rev 2.2 June 06

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