SKB15N60HS View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

SKB15N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SKB15N60HS

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C

VCC=400V,IC=15A,

VGE=0/15V,

RG= 3.6Ω

Lσ1) =60nH,

Cσ1) =40pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=150°C

VCC=400V,IC=15A,

VGE=0/15V,

RG= 23Ω

Lσ1) =60nH,

Cσ1) =40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

11

6

72

26

0.38

0.20

0.58

12

15

235

17

0.48

0.30

0.78

Unit

max.

ns

mJ

ns

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

Tj=150°C

-

184

tS

VR=400V, IF=15A,

-

30

tF

diF/dt=1070A/µs

-

155

Diode reverse recovery charge

Qrr

-

1320

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

Irrm

dirr/dt

-

18

-

360

ns

nC

A

A/µs

1) Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E.

Power Semiconductors

4

Rev 2.3 Oct. 07

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