UTC BT151
SCR
IGT(Tj)
3 IGT(25℃)
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj/C
Fig. 7.Normalised gate trigger Current
IGT(Tj)/IGT(25℃),versus junction temperature Tj.
IL(Tj)
IL(25℃)
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj/C
Fig.8.Normalised latching Current IL(Tj)/IL(25℃),
versus junction temperature Tj
IH(Tj)
3 IH(25℃)
2.5
2
1.5
1
.5
0
-50
0
50
100
150
Tj/C
Fig. 9.Normalised holding current IH(Tj)/IH(25℃),
versus junction temperature Tj.
IT/A
30
Tj=125℃
25 Tj=25℃
20
15
typ
max
10
5
0
0
0.5
1
1.5
2
VT/V
Fig.10.Typical and maximum on-state characteristic.
Zth j-mb(K/W)
10
1
0.1
PD tp
0.01
0.001
10us 0.1ms 1ms 10ms 0.1s
tp/s
t
1s
10s
Fig.11.Transient thermal impedance Zthj-mb,
versus pulse width tp.
10000dVD/dt(V/us)
1000
100
RGK=100Ω
gate open circuit
10
0
50
100
150
Tj/C
Fig.12.Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
UTC UNISONIC TECHNOLOGIES CO., LTD. 4
QW-R301-007,B