1SS270 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

1SS270

Silicon Epitaxial Planar Diode for High Speed Switching

Hitachi -> Renesas Electronics 

1SS270

Absolute Maximum Ratings (Ta = 25°C)

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Average forward current

Power dissipation

Junction temperature

Storage temperature

Note: Within 1s forward surge current.

Symbol

VRM

VR

I FM

I FSM *

IO

Pd

Tj

Tstg

Value

Unit

35

V

30

V

450

mA

1

A

150

mA

250

mW

175

°C

–65 to +175

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Forward voltage

VF

Reverse current

IR

Capacitance

C

Reverse recovery time trr

—

—

0.8

V

IF = 10mA

—

—

1.0

µA

VR = 30V

—

—

3.0

pF

VR = 1V, f = 1MHz

—

—

3.5

ns

IF = 10mA, VR = 6V, RL = 50Ω

2

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