2SB1182 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name

Description

Manufacturer

2SB1182

TO-252-2L(4R) Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L(4R) Plastic-Encapsulate Transistors

2SB1182 TRANSISTOR (PNP)

FEATURES

Power Dissipation

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

Unit

-40

V

-32

V

-5

V

-2

A

1.5

W

150

℃

-55-150

℃

TO-252-2L

1.BASE

2.COLLECTOR

3EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test condition

Min

Collector-base breakdown voltage

= V(BR)CBO IC=-50µA,IE 0

-40

Collector-emitter breakdown voltage = V(BR)CEO IC=-1mA,IB 0

-32

Emitter-base breakdown voltage

= V(BR)EBO IE=-50µA,IC 0

-5

Collector cut-off current

= ICBO VCB=-20V,IE 0

Emitter cut-off current

= IEBO VEB=-4V,IC 0

DC current gain

hF= E(1) VCE=-3V,IC -500mA

82

Collector-emitter saturation voltage

= VCE(sat) IC=-2A,IB -200mA

Transition frequency

fT = VCE=-5= V,IC -0.5A,f 30MHz

Collector output capacitance

Cob

VCB=-1= 0V,= IE 0,f 1MHz

Typ Max Unit

V

V

V

-1

µA

-1

µA

390

-0.8

V

100

MHz

50

pF

CLASSIFICATION OF hFE(1)

Rank

Range

P

82-180

Q

120-270

R

180-390

www.cj-elec.com

1

D,Mar,2016

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