Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2SB1182 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
Part Name
Description
Manufacturer
2SB1182
TO-252-2L(4R) Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
2SB1182 Datasheet PDF : 4 Pages
1
2
3
4
Typical Characteristics
-600
-500
-400
-300
-200
-100
-0
-0
-500
-300
-100
-30
Static Characteristic
-2.5mA
-2.25mA
-2.0mA
COMMON
EMITTER
T =25
℃
a
-1.75mA
-1.5mA
-1.25mA
-1.0mA
-0.75mA
-0.5mA
I =-0.25mA
B
-1
-2
-3
-4
-5
-6
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
—— I
CEsat
C
T =100
℃
a
T =25
℃
a
-10
-3
-1
-10
-30
-100
-300
COLLECTOR CURRENT I (mA)
C
-2000
-1000
COMMON EMITTER
V =-3V
CE
I —— V
C
BE
β
=10
-1000 -2000
-300
T =100
℃
a
-100
-30
T =25
℃
a
-10
-3
-1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
BASE-EMMITER VOLTAGE V (V)
BE
P —— T
C
a
1.8
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
AMBIENT TEMPERATURE T (
℃
)
a
www.cj-elec.com
150
2
h —— I
400
FE
C
T =100
℃
a
COMMON EMITTER
V =-3V
CE
300
T =25
℃
a
200
100
0
-5
-10
-1.2
-30
-100
-300
COLLECTOR CURRENT I (mA)
C
V
BEsat
——
I
C
-1000 -2000
T =25
℃
a
-0.8
T =100
℃
a
-0.4
-0.0
-1
300
100
β
=10
-3
-10
-30
-100
-300
-1000 -2000
COLLECTOR CURRENT I (mA)
C
C / C —— V / V
ob ib
CB EB
C
ib
f=1MHz
I =0/I =0
E
C
T =25
℃
a
C
ob
30
10
-0.1
-0.3
-1
-3
REVERSE VOLTAGE V (V)
-10
-20
D
,
Mar
,201
6
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]