IDT49FCT806AP View Datasheet(PDF) - Integrated Device Technology
Part Name
Description
Manufacturer
IDT49FCT806AP Datasheet PDF : 7 Pages
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IDT49FCT805/806/A
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
VTERM(2) Terminal Voltage with Respect to
GND
VTERM(3) Terminal Voltage with Respect to
GND
TSTG Storage Temperature
Max.
–0.5 to +7.0
–0.5 to
VCC +0.5
–65 to +150
Unit
V
V
°C
IOUT
DC Output Current
–60 to +120 mA
NOTES:
2574 lnk 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals.
3. Output and I/O terminals.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter(1) Conditions Typ. Max. Unit
CIN
Input
Capacitance
VIN = 0V
4.5 6.0 pF
COUT Output
VOUT = 0V 5.5 8.0 pF
Capacitance
NOTE:
2574 lnk 04
1. This parameter is measured at characterization but not tested.
FUNCTION TABLE(1)
Outputs
Inputs
49FCT805
49FCT806
OEA, OEB INA, INB OAn, OBn MON OAn, OBn MON
L
L
L
L
H
H
L
H
H
H
L
L
H
L
Z
L
Z
H
H
H
Z
H
Z
L
NOTE:
1. H = HIGH, L = LOW, Z = High Impedance
2574 tbl 02
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol
VIH
Parameter
Input HIGH Level
Test Conditions(1)
Guaranteed Logic HIGH Level
Min. Typ.(2) Max. Unit
2.0 —
—
V
VIL
Input LOW Level
Guaranteed Logic LOW Level
—
— 0.8
V
II H
II L
IOZH
Input HIGH Current(5)
Input LOW Current(5)
Off State (HIGH Z)(5)
VCC = Max.
VCC = Max.
VCC = Max.
VI = VCC
VI = GND
VO = VCC
—
—
±1 µA
—
—
±1 µA
—
—
±1 µA
IOZL
Output Current(5)
VO = GND
—
—
±1 µA
VIK
Clamp Diode Voltage
VCC = Min., IIN= –18mA
— –0.7 –1.2 V
IOS
Short Circuit Current
VCC = Max.(3), VO = GND
–60 –120 — mA
VOH
Output HIGH Voltage
VCC = 3V, VIN = VLC or VHC, IOH = –32µA
VHC VCC
—
V
VCC = Min.
IOH = –300µA
VHC VCC
—
VOL
Output LOW Voltage
VIN = VIH or VIL
IOH = –12mA MIL.
3.6 4.3 —
IOH = –15mA COM'L.
IOH = -24mA MIL.
2.4 3.8 —
IOH = -24mA COM'L.
VCC = 3V, VIN = VLC or VHC, IOL= 300µA
— GND VLC
V
VCC = Min.
IOH = 300µA
— GND VLC(4)
VIN = VIH or VIL
IOL = 48mA MIL.
— 0.3 0.55
IOL = 64mA COM'L.
VH
Input Hysteresis for all inputs
—
— 200 — mV
ICC
Quiescent Power Supply Current VCC = Max., VIN = GND or VCC
—
5 500
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. The test limit for this parameter is ± 5µA at TA = –55°C.
µA
2574 tbl 05
9.1
3
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