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MPS6601RLRAG View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MPS6601RLRAG
ON-Semiconductor
ON Semiconductor 
MPS6601RLRAG Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NPN − MPS6601; PNP − MPS6651, MPS6652
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MPS6601/6651
25
MPS6652
40
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
MPS6601/6651
25
MPS6652
40
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)EBO
4.0
Vdc
MPS6601/6651
MPS6652
MPS6601/6651
MPS6652
ICES
ICBO
mAdc
0.1
0.1
mAdc
0.1
0.1
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
hFE
50
50
30
VCE(sat)
Vdc
0.6
VBE(on)
Vdc
1.2
Current −Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
fT
Cobo
MHz
100
pF
30
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 40 Vdc, IC = 500 mAdc,
IB1 = 50 mAdc,
tp w 300 ns Duty Cycle)
td
25
ns
tr
30
ns
ts
250
ns
tf
50
ns
ORDERING INFORMATION
Device
MPS6601RLRAG
Package
TO−92 (TO−226)
(Pb−Free)
Shipping
2000 Units / Tape & Reel
MPS6651G
TO−92 (TO−226)
(Pb−Free)
MPS6652
MPS6652G
TO−92 (TO−226)
TO−92 (TO−226)
(Pb−Free)
5000 Units / Bulk
MPS6652RLRAG
TO−92 (TO−226)
(Pb−Free)
2000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2

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