B0530W View Datasheet(PDF) - Diode Semiconductor Korea
Part Name
Description
Manufacturer
B0530W Datasheet PDF : 3 Pages
| |||
Diode Semiconductor Korea
Schottky Barrier Diode
B0520LW/B0530W/B0540W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Minimum Reverse
Breakdown Voltage
Maximum Forward Voltage
Drop
Maximum Leakage Current
Junction Capacitance
Symbol
V(BR)R
VFM
IRM
CJ
B0520LW
20
-
-
0.300
0.385
-
0.220
0.330
-
75
-
250
-
-
5.0
8.0
-
170
B0530W B0540W Unit
-
-
30
-
V
-
40
0.375
-
0.430
0.510
-
0.620
V
-
-
-
0.460
-
0.610
-
-
20
-
-
10
μA
130
-
-
20
-
-
5.0
mA
-
13
pF
Test Conditions
IR= 250μA
IR= 130μA
IR= 20μA
IF=0.1A, Tj =25℃
IF=0.5A, Tj =25℃
IF=1.0A, Tj =25℃
IF=0.1A, Tj =100℃
IF=0.5A, Tj =100℃
IF=1.0A, Tj =100℃
VR=10V,Tj=25℃
VR=15V,Tj=25℃
VR=20V,Tj=25℃
VR=30V,Tj=25℃
VR=40V,Tj=25℃
VR=10V,Tj=100℃
VR=20V,Tj=100℃
VR=40V,Tj=100℃
f=1MHz,VR=0V DC
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
www.diode.kr
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