7N60-TF3-T View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

7N60-TF3-T

7.4 Amps, 600 Volts N-CHANNEL MOSFET

Unisonic Technologies 

7N60

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain-Source Diode Characteristics and Maximum Ratings

Drain-Source Diode Forward Voltage

VSD VGS = 0V, IS = 7.4 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode Forward

Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR VGS = 0V, IS = 7.4 A,

QRR dIF / dt = 100A/µs (Note 4)

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 7.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

1.4 V

7.4 A

29.6 A

320

ns

2.4

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 7

QW-R502-076,B

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