AT28LV64B_ View Datasheet(PDF) - Atmel Corporation

Part Name

Description

Manufacturer

AT28LV64B_

64K (8K x 8) Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Atmel Corporation 

AT28LV64B

Features

• Single 3.3V ± 10% Supply

3-Volt-Only Read and Write Operation

• Software-Protected Programming

•• Low Power Dissipation

15 mA Active Current

20 µA CMOS Standby Current

• Fast Read Access Time − 200 ns

• Automatic Page Write Operation

Internal Address and Data Latches for 64-Bytes

Internal Control Timer

• Fast Write Cycle Times

Page Write Cycle Time: 10 ms Maximum

1 to 64-Byte Page Write Operation

DATA Polling for End of Write Detection

•• High Reliability CMOS Technology

Endurance: 10,000 Cycles

Data Retention: 10 Years

JEDEC Approved Byte-Wide Pinout

•• Commercial and Industrial Temperature Ranges

Description

The AT28LV64B is a high-performance electrically erasable programmable read only

memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-

factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-

cess times to 200 ns with power dissipation of just 54 mW. When the device is dese-

lected, the CMOS standby current is less than 20 µA.

The AT28LV64B is accessed like a static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

Pin Configurations

(continued)

Pin Name

A0 - A12

CE

OE

WE

I/O0 - I/O7

NC

DC

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

Don’t Connect

PDIP, SOIC

Top View

64K (8K x 8)

Low Voltage

CMOS

E2PROM with

Page Write and

Software Data

Protection

AT28LV64B

PLCC

Top View

TSOP

Top View

Note: PLCC package pins 1 and

17 are DON’T CONNECT.

0299C

2-135

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