PDTA123JEF_99 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PDTA123JEF_99 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP resistor-equipped transistor
Preliminary specification
PDTA123JEF
FEATURES
• Built-in bias resistors R1 and R2
(typ. 2.2 kΩ and 47 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
handbook, halfpage 3
3
R1
1
R2
1
2
2
Top view
MAM413
Fig.1 Simplified outline (SC-89; SOT490) and symbol.
DESCRIPTION
PNP resistor-equipped transistor in
an SC-89 (SOT490) plastic package.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
PDTA123JEF
MARKING
CODE
27
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
VI
IO
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MIN.
−
−
−
MAX.
−50
−50
−10
UNIT
V
V
V
−
5
V
−
−12
V
−
−100
mA
−
−100
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
1999 Apr 20
2
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