BCW32 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BCW32 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BCW31; BCW32; BCW33
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
fT
F
emitter cut-off current
DC current gain
BCW31
BCW32
BCW33
DC current gain
BCW31
BCW32
BCW33
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
CONDITIONS
IE = 0; VCB = 32 V
IE = 0; VCB = 32 V; Tj = 100 °C
IC = 0; VEB = 5 V
IC = 10 µA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 2 mA; VCE = 5 V
IE = Ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
100 nA
10
µA
100 nA
−
90
−
−
150 −
−
270 −
110 −
220
200 −
450
420 −
800
−
120 250 mV
−
210 −
mV
−
750 −
mV
−
850 −
mV
550 −
700 mV
−
2.5 −
pF
100 −
−
MHz
−
−
10
dB
1999 Apr 13
3
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