FDW256P View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDW256P Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = -8A
8
6
VDS = -10V
-15V
-20V
4
2
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
1ms
RDS(ON) LIMIT
10
1
10ms
100ms
1s
10s
VGS = -10V
DC
0.1 SINGLE PULSE
RθJA = 208oC/W
T A = 25oC
0.01
0.01
0.1
1
10
100
-V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4000
3200
2400
CISS
f = 1 MHz
VGS = 0 V
1600
800
0
0
COSS
CRSS
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 208°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 208oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW256P Rev C1(W)
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