2SC2486 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC2486 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2486
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
120
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
2.0
V
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A;VCE=5V
VCB=120V; IE=0
VEB=3V; IC=0
1.8
V
50
μA
50
μA
hFE-1
DC current gain
IC=0.02A ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
40
200
hFE-3
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
hFE-2 Classifications
R
Q
P
IC=5A ; VCE=5V
IC=0.5A ; VCE=5V
20
20
MHz
40-80 60-120 100-200
2
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