Philips Semiconductors
PEMB18; PUMB18
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
103
hFE
102
10
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(1)
(2)
(3)
−103
VCEsat
(mV)
−102
(1)
(2)
(3)
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1
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10000
VI(on)
(mV)
−8000
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−10
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−2000
VI(off)
(mV)
−1600
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−6000
−4000
(1)
(2)
−2000
(3)
−1200
(1)
(2)
−800
(3)
−400
0
−10−1
−1
−10
−102
IC (mA)
0
−10−2
−10−1
−1
−10
IC (mA)
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
VCE = −5V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of collector
current; typical values
9397 750 14371
Product data sheet
Rev. 02 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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