2SB1226 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB1226 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=-5mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞
VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA
VBEsat Base-emitter saturation voltage
IC=-1.5A ; IB=-3mA
ICBO
Collector cut-off current
VCB=-80V;IE=0
IEBO
Emitter cut-off current
VEB=-5V;IC=0
hFE
DC current gain
IC=-1.5A ; VCE=-3V
fT
Transition frequency
IC=-1.5A ; VCE=-5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=500IB1=-500IB2=-1A
VCC=-50V ,RL=50Ω
Product Specification
2SB1226
MIN TYP. MAX UNIT
-110
V
-100
V
-1.0 -1.5
V
-2.0
V
-0.1 mA
-3.0 mA
1500 4000
20
MHz
0.7
μs
2.4
μs
1.2
μs
2
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