C2482 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
| C2482 Datasheet PDF : 0 Pages | |||
2SC2482
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
300
V
VCEO
300
V
Emitter-Base Voltage
Collector Current
VEBO
7
V
IC
100
mA
Base Current
Collector Power Dissipation
IB
50
mA
PC
900
mW
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
TEST CONDITIONS
ICBO VCB=240V, IE= 0
IEBO VEB= 7V, Ic=0
hFE(1) VCE=10V, Ic=4mA
hFE(2) VCE=10V, Ic=20mA
VCE(sat) Ic=10mA, IB=1mA
VBE(sat) Ic=10mA , IB=1mA
fT VCE=10V, Ic=20mA
Cob VCB=20V, IE= 0, f=1MHz
MIN TYP MAX UNIT
1.0 μA
1.0 μA
20
30
150
1.0
V
1.0
V
50
MHz
3.0
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-015.B
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