Q67000-A8298 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
Q67000-A8298
Siemens AG
Q67000-A8298 Datasheet PDF : 12 Pages
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TDA 4817
Characteristics (cont’d)
VSON < VS < VZ; TA = – 25 to 85 ˚C
Parameter
Symbol
Limit Values
Unit
min. typ.
max.
Z-Diode (VS)
Z-voltage (observe Pmax) VZ
Multiplier
13
15.5 17
V
Quadrant for input
voltages
Input voltage M1
Reference level for M1
Input voltage M2
Reference level for M2
Input current M1, M2
Max. output voltage
Multiplier gain
Multiplier gain
Temperature response
of coefficient
VM1
VREF M1
VM2
VREF M2
– II
VQM max
CQ25
CQ
∆TC/CQ
0
VREF
0
0.62
0.55
– 0.3
I.
0
VREF
1.6
0.67
– 0.1
qu
2
V
V
VREF + 1 V
V
2
µA
V
0.72
V– 1
0.77
V– 1
0.1
%/K
Delay Times
Input comparator-QSIP tI
Detector
500
700
ns
Upper switching voltage
for voltage rising (H)
VDetH
1.0
1.3
1.6
V
Lower switching voltage
for voltage falling (L)
Input current
Clamping-diode
VDetL
– IDet
0.95
V
10
µA
level
positive VDet +
negative VDet –
Switching hysteresis
VDethy
50
6.9
V
0.6
300
mV
Calculation of output voltage VQM: VQM = C x VM1 x VM2 in V.
Test Condition
IZ = 200 mA
Tj = 25 ˚C 1)
1)
2)
0.9 V < VDet < 6 V
IDet = 3 mA
IDet = 3 mA
1) VM1 = 1 V
VM2 = VREF + 1 V
2) Step function on comparator input ∆VComp from – 100 mV to + 100 mV.
Semiconductor Group
7
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