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Part Name
Description
BD896 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BD896
SILICON DARLINGTON POWER TRANSISTORS
Comset Semiconductors
BD896 Datasheet PDF : 4 Pages
1
2
3
4
SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
CBO
I
CEO
I
EBO
V
CEO
V
CE(SAT)
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
Collector-Emitter
Breakdown Voltage
(*)
Collector-Emitter
saturation Voltage (*)
I
E
= 0
V
CB
= -45 V
I
E
= 0
V
CB
= -60 V
I
E
= 0
T
C
=25°C
V
CB
= -80 V
I
E
= 0
V
CB
= -100 V
I
E
= 0
V
CB
= -45 V
I
E
= 0
V
CB
= -60 V T
C
=100°
I
E
= 0
C
V
CB
= -80 V
I
E
= 0
V
CB
= -100 V
I
E
= 0, V
CE
= - 30 V
I
E
= 0, V
CE
= - 30 V
I
E
= 0, V
CE
= - 40 V
I
E
= 0, V
CE
= - 50 V
V
EB
= -5 V, I
C
= 0
I
C
= -100 mA, I
B
= 0
I
C
= -3 A, I
B
= -12 mA
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
Min Typ Max Unit
-
- -0.2 mA
-
-
-2 mA
-
- -0.5 mA
-
-
-2 mA
-45 -
-60 -
-80 -
-100 -
-
-
-
V
-
-
- -2.5 V
25/09/2012
COMSET SEMICONDUCTORS
2|4
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