MPSL51(2001) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MPSL51
(Rev.:2001)

Amplifier Transistor PNP Silicon

ON Semiconductor 

MPSL51

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain(1)

(IC = –50 mAdc, VCE = –5.0 Vdc)

hFE

40

250

—

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

Base–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

VCE(sat)

Vdc

—

–0.25

—

–0.30

VBE(sat)

—

—

Vdc

–1.2

–1.2

Current–Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz)

fT

60

—

MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

8.0

pF

Small–Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hfe

20

—

—

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

http://onsemi.com

2

Share Link: