BUT12 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BUT12

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT12; BUT12A

102

andbook, full pagewidth

MGB945

IC

(A)

ICM max

10

IC max

(1)

δ = 0.01

II

1

tp =

20 µs

50 µs

100 µs

200 µs

I

10−1

10−2

10

(2)

BUT12

BUT12A

102

500 µs

III

1 ms

2 ms

5 ms

10 ms

20 ms

DC

103

VCE (V)

104

10−2

IC

III

(A)

BUT12

BUT12A

10−3

IV

400 1000

VCE (V)

Tmb < 25 °C.

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

(1) Ptot max and Ptot peak max lines.

(2) Second breakdown limits.

Fig.4 Forward bias SOAR.

1997 Aug 13

4

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