2SD1767 View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
Manufacturer
2SD1767 Datasheet PDF : 4 Pages
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Production specification
Medium power transistor(80V,0.7A)
2SD1767
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0
80
V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0
80
V
Emitter-base breakdown voltage
V(BR)EBO IE=50μA,IC=0
5
V
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Range
82-180
MARKING
DCP
VCB=50V,IE=0
VEB=4V,IC=0
VCE=3V,IC=0.1A
IC=0.5A, IB=0.05A
VCE=10V,IC=50mA,
f=100MHz
VCB=10V,IE=0,f=1MHz
Q
120-270
DCQ
0.5 μA
0.5 μA
120
390
0.2 0.4 V
120
MHz
10
pF
R
180-390
DCR
E058
Rev.A
www.gmicroelec.com
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