IRFR120Z View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

IRFR120Z

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRFR120Z, IIRFR120Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=5.2A

IGSS

Gate-Source Leakage Current

VGS= ±20V

IDSS

Drain-Source Leakage Current

VDS=100V; VGS= 0V

VSD

Diode forward voltage

Is=5.2A, VGS = 0V

MIN TYP MAX UNIT

100

V

2

4

V

190 mΩ

±0.2 μA

20

μA

1.3

V

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

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