2SB859 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SB859 Datasheet PDF : 6 Pages
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2SB859
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO –80 —
voltage
Emitter to base breakdown
V(BR)EBO
–5
—
voltage
Collector cutoff current
I CBO
—
—
DC current transfer ratio
hFE1*1
60
—
hFE2
35
—
Base to emitter voltage
VBE
—
—
Collector to emitter saturation VCE(sat)
—
—
voltage
Gain bandwidth product
fT
—
20
Collector output capacitance Cob
—
75
Notes: 1. The 2SB859 is grouped by hFE1 as follows.
2. Pulse test
Max
—
Unit
V
Test conditions
IC = –50 mA, RBE = ∞
—
V
IE = –10 µA, IC = 0
–0.1 mA
200
—
–1.5 V
–2
V
VCB = –80 V, IE = 0
VCE = –5 V, IC = –1 A*2
VCE = –5 V, IC = –0.1 A*2
VCE = –5 V, IC = –1 A*2
IC = –2 A, IB = –0.2 A*2
—
MHz VCE = –5 V, IC = –0.5 A*2
—
pF
VCB = –20 V, IE = 0, f = 1 MHz
B
60 to 120
C
100 to 200
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
–5
(–10 V, –4 A)
IC max(Continuous) DC
–2
TC = 25°C
Operation (–33 V, –12 A)
–1.0
–0.5
–0.2
–0.1
–0.05
–1 –2
(–80 V, –0.06 A)
–5 –10 –20 –50 –100
Collector to emitter voltage VCE (V)
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