BD135 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BD135 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD135 BD137 BD139
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
0.5
V
VBE
Base-emitter voltage
IC=500mA ; VCE=2V
1.0
V
ICBO
Collector cut-off current
VCB=30V; IE=0
VCB=30V; IE=0 Tj=125℃
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=2V
40
DC current gain
63
hFE-2
BD135-10;BD137-10;BD139-10
IC=150mA ; VCE=2V
63
BD135-16;BD137-16;BD139-16
100
hFE-3
DC current gain
IC=500mA ; VCE=2V
25
100
nA
10
μA
100
nA
250
160
250
fT
Transition frequency
IC=50mA; VCE=5V ;f=100MHz
190
MHz
2
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