2SA1797 View Datasheet(PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Part Name

Description

Manufacturer

2SA1797

Silicon PNP transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA1797

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current-Continuous

Collector Current -Continuous(Pulse)

Collector Power Dissipation

Collector Power Dissipation*

Junction Temperature

Storage Temperature Range

*When mounted on a 40×40×0.7mm ceramic board.

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

*PC

Tj

Tstg

数值

Rating

-50

-50

-6.0

-3.0

-6.0

0.5

2.0

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-50μA

VCEO IC=-1.0mA

最小值 典型值 最大值 单位

Min Typ Max Unit

-50

V

-50

V

Emitter to Base Breakdown Voltage VEBO IE=-50μA

-6.0

V

Collector Cut-Off Current

ICBO VCB=-50V

-0.1 μA

Emitter Base Cut-Off Current

IEBO VEB=-5.0V

-0.1 μA

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

Collector Output Capacitance

hFE VCE=-2.0V IC=-500mA 82

270

VCE(sat)

fT

Cob

IC=-1.0A

VCE=-2.0V

f=100MHz

VCB=-10V

f=1.0MHz

IB=-50mA

IC=-0.5A

IE=0

-0.15 -0.35 V

200

MHz

36

pF

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