MJ15023 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
MJ15023 Datasheet PDF : 2 Pages
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PNP - MJ15023, MJ15025*
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(lc = 100mAdc, IB = 0)
VCEO(sus)
MJ15023
200
-
MJ15025
250
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1 -5 Vdc)
(VCE = 250 Vdc, VBE(0ff) = 1-5 Vdc)
ICEX
MJ15023
MJ15025
(lAdc
;
250
250
Collector Cutoff Current
(VCE = 1 50 Vdc, IB = 0)
(VCE = 200 Vdc, IB = 0)
MJ15023
M J 1 5025
•CEO
jiAdc
500
-
500
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
Both
IEBO
~
500
liAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non-repetitive))
(VCE = 80 Vdc, t = 0.5 s (non-repetitive))
Is/b
Adc
5
-
2
-
ON CHARACTERISTICS
DC Current Gain
(lc = 8 Adc, VCE= 4 Vdc)
(lc = 16 Adc, VCE = 4 Vdc)
HFE
-
15
60
5
-
Collector-Emitter Saturation Voltage
(lc = 8Adc, IB = 0.8 Adc)
(lc = 16 Adc, IB = 3.2 Adc)
VcE(sat)
Vdc
-
1.4
-
4.0
Base- Emitter On Voltage
(lc = 8 Adc, VCE = 4 Vdc)
VBE(on)
-
2.2
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB=10Vdc, lE = 0,f,est = 1 MHz)
2. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%.
IT
4
-
MHz
C0b
—
600
PF
100
t'
i—i
rc = 25 -
i 20
&«
x
V
I
\^=
- - - BONDING WIRE LIMITED
FHERMAL LIMITATION
\
\— SINGLE PULSE)
SECOND BREAKDOWN JMIT pn
0.1 0.2
I II
0.5 10 20
II II
50 100
\C
250 500 1 k
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active-Region Safe Operating Area
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate lc - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200°C; Tc is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
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