MK10FX256VMD12 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

MK10FX256VMD12

K10 Sub-Family

NXP Semiconductors. 

Peripheral operating requirements and behaviors

6.4.1.2 Flash timing specifications — commands

Table 21. Flash command timing specifications

Symbol Description

Read 1s Block execution time

trd1blk256k

• 256 KB program/data flash

Min.

—

Typ.

—

Max.

1.7

Unit

Notes

ms

trd1sec2k Read 1s Section execution time (flash sector)

—

—

60

μs

1

tpgmchk Program Check execution time

—

—

45

μs

1

trdrsrc Read Resource execution time

—

—

30

μs

1

tpgm4 Program Longword execution time

—

65

145

μs

Erase Flash Block execution time

2

tersblk256k

• 256 KB program/data flash

—

122

985

ms

tersscr

Erase Flash Sector execution time

Program Section execution time

tpgmsec512

tpgmsec1k

tpgmsec2k

• 512 bytes flash

• 1 KB flash

• 2 KB flash

—

14

114

ms

2

—

2.4

—

ms

—

4.7

—

ms

—

9.3

—

ms

trd1all

trdonce

tpgmonce

tersall

tvfykey

tswapx01

tswapx02

tswapx04

tswapx08

Read 1s All Blocks execution time

Read Once execution time

Program Once execution time

Erase All Blocks execution time

Verify Backdoor Access Key execution time

Swap Control execution time

• control code 0x01

• control code 0x02

• control code 0x04

• control code 0x08

—

—

1.8

ms

—

—

25

μs

1

—

65

—

μs

—

250

2000

ms

2

—

—

30

μs

1

—

200

—

μs

—

70

150

μs

—

70

150

μs

—

—

30

μs

1. Assumes 25 MHz flash clock frequency.

2. Maximum times for erase parameters based on expectations at cycling end-of-life.

6.4.1.3 Flash high voltage current behaviors

Table 22. Flash high voltage current behaviors

Symbol Description

Min.

Typ.

Max.

Unit

IDD_PGM Average current adder during high voltage

—

flash programming operation

2.5

6.0

mA

IDD_ERS Average current adder during high voltage

—

flash erase operation

1.5

4.0

mA

K10 Sub-Family Data Sheet, Rev. 3, 6/2013.

32

Freescale Semiconductor, Inc.

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