BDW94C View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BDW94C Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
BDW94
CONDITIONS
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDW94A
BDW94B
| _ — -lOAmA1 Ir,— H
BDW94C .;
VcE(sat)-1 Collector-Emitter Saturation Voltage |c= -5A; |B= -20mA
VcE(S3t)-2 Collector-Emitter Saturation Voltage |C=-10A;IB=-0.1A
N/BE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-1 Base-Emitter Saturation Voltage
lc= -5A; IB= -20mA
IC=-10A;IB=-0.1A
BDW94
VCB= -45V; IE= 0
Collector
IcBO
Cutoff Current
BDW94A
BDW94B
VCB= -60V; IE= 0
VCB= -80V; IE= 0
BDW94C
VCB=-100V;IE=0
BDW94
VCE= -45V; IB= 0
Collector
ICEO
Cutoff Current
BDW94A
BDW94B
VCE= -60V; IB= 0
VCE= -80V; IB= 0
BDW94C
VCE=-100V; IB=0
IEBO
hpE-1
Emitter Cutoff Current
DC Current Gain
VEB= -5V; lc= 0
lc= -3A; VCE= -3V
hpE-2
DC Current Gain
lc= -5A; VCE= -3V
hFE-3
DC Current Gain
lc=-10A; Vce=-3V
VECF-I C-E Diode Forward Voltage
IF= -5A
VECF-2 C-E Diode Forward Voltage
IF=-10A
BDW94/A/B/C
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-2.0
V
-3.0
V
-2.5
V
-4.0
V
-0.1
mA
-1.0 mA
1000
750
100
-2.0
mA
20000
-2.0
V
-4.0
V
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