BST84 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

BST84

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

BST84

DESCRIPTION

N-channel vertical D-MOS transistor

in SOT89 envelope and designed for

use as line current interrupter in

telephone sets and for application in

relay, high-speed and

line-transformer drivers.

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No second breakdown

QUICK REFERENCE DATA

Drain-source voltage

Gate-source voltage (open drain)

Drain current (DC)

Total power dissipation up to Tamb = 25 °C

Drain-source ON-resistance

ID = 250 mA; VGS = 10 V

Transfer admittance

ID = 250 mA; VDS = 15 V

PINNING - SOT89

1 = source

2 = gate

3 = drain

VDS

±VGSO

ID

Ptot

max.

max.

max.

max.

200 V

20 V

250 mA

1W

RDS(on)

typ.

max.

6Ω

12 Ω

 Yfs typ. 250 mS

PIN CONFIGURATION

handbook, 2 columns

d

g

MBB076 - 1 s

Marking: KN

handbook, halfpage

1

3

Bottom view

2

MSB013

Fig.1 Simplified outline and symbol.

April 1995

2

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