KSB1151 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

KSB1151

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-10

-8

IB = -100mA IB = -80mA

IB = -60mA

-6

IB

IB

=

=

-40mA

-30mA

-4

IB = -20mA

I = -10mA

B

-2

I =0

B

-0

-0.4

-0.8

-1.2

-1.6

-2.0

V [V], COLLECTOR-EMITTER VOLTAGE

CE

Figure 1. Static Characteristic

-10

IC = 10 IB

-1

VBE(sat)

-0.1

V CE(sat)

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

-10

-8

-6

-4

-2

-0

-20

-40

-60

-80

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Reverse Bias Safe Operating Area

©2003 Fairchild Semiconductor Corporation

-1000

-100

-10

VCE = -2V

VCE = -1V

-1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

-10

IC(Pulse)MAX

IC(DC)MAX

-1

Dissipat2io0n0mLSim10imteSd2mS

s/b Limited

-0.1

-1

-10

-100

V [V], COLLECTOR-EMITTER VOLTAGE

CE

Figure 4. Forward Bias Operating Area

160

140

120

100

80

60

40

20

0

0

sD/bISLSIIMPAITTEIODN LIMITED

25

50

75

100

125

150

175

200

TC[oC], CASE TEMPERATURE

Figure 6. Derating Curve of Safe Operating Areas

Rev. B, May 2003

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