2SC3296 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC3296 Datasheet PDF : 2 Pages
| |||
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25*C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat)
Collector-Emitter Saturation Voltage lc= 0.5A; IB= 50mA
VBE(OH) Base-Emitter On Voltage
lc=0.5A; VCE= 10V
ICBO
Collector Cutoff Current
Vcs=120V, IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hFE
DC Current Gain
lc=0.5A; VCE= 10V
fT
Current-Gain—Bandwidth Product lc=0.5A; VCE= 10V
COB
Output Capacitance
IE=0;VCB= 10V;f=1MHz
2SC3296
MIN TYP. MAX UNIT
1.5
V
0.85
V
10
uA
10
MA
40
140
4
MHz
35
pF
Share Link: 