FZT957 View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

FZT957

300V PNP MEDIUM POWER TRANSISTOR IN SOT223

Diodes Incorporated. 

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 10)

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Symbol

BVCBO

BVCER

BVCEO

BVEBO

ICBO

Collector Cut-Off Current

ICER

Emitter Cut-Off Current

IEBO

DC Current Transfer Static Ratio (Note 10)

hFE

Collector-Emitter Saturation Voltage (Note 10)

Base-Emitter Saturation Voltage (Note 10)

Base-Emitter Turn-on Voltage (Note 10)

VCE(sat)

VBE(sat)

VBE(on)

Min

-330

-330

-300

-7

—

—

—

—

—

100

100

90

—

—

—

—

—

—

Typ

-440

-440

-400

-8

<1

—

<1

—

<1

200

200

170

10

-60

-110

-170

-910

-750

Transitional Frequency

fT

—

85

Output Capacitance

Switching Time

Cobo

tON

tOFF

—

23

—

108

—

2,500

Note:

10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

Max

—

—

—

—

-50

-1

-50

-1

-10

-

300

—

—

-100

-165

-240

-1,150

-1,020

—

—

—

—

FZT957

Unit

V

V

V

V

nA

µA

nA

µA

nA

—

mV

mV

mV

MHz

pF

ns

Test Condition

IC = -100µA

IC = -1µA, RB ≤ 1kΩ

IC = -10mA

IE = -100µA

VCB = -300V; R ≤1kΩ

VCB = -300V, TA = +100°C

VCE = -300V

VCE = -300V, TA = +100°C

VEB = -6V

IC = -10mA, VCE = -10V

IC = -0.5A, VCE = -10V

IC = -1A, VCE = -10V

IC = -2A, VCE = -10V

IC = -100mA, IB = -10mA

IC = -500mA, IB = -100mA

IC = -1A, IB = -300mA

IC = -1A, IB = -300mA

IC = -1A, VCE = -10V

IC = -100mA, VCE = -10V,

f = 50MHz

VCB = -20V, f = 1MHz

VCC = -100V, IC = -500mA,

-IB1 = IB2 = -50mA

FZT957

Datasheet Number: DS33191 Rev. 7 - 2

4 of 7

www.diodes.com

December 2016

© Diodes Incorporated

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