DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2N5796 View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
2N5796
Microsemi
Microsemi Corporation 
2N5796 Datasheet PDF : 2 Pages
1 2
2N5795, 2N5796 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 100 µAdc, VCE = 10 Vdc
2N5795
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 100 µAdc, VCE = 10 Vdc
2N5796
IC = 1.0 mAdc, VCE = 10 Vdc
2N5796U
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
Cibo
ton
toff
Min. Max.
Unit
40
40
40
40
150
20
20
75
100
100
100
300
50
50
0.4
Vdc
1.6
1.3
Vdc
2.6
2.0
10
8.0
pF
25
pF
50
ηs
140
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 2 of 2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]