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Part Name
Description
GS74104AGJ View Datasheet(PDF) - Giga Semiconductor
Part Name
Description
Manufacturer
GS74104AGJ
1M x 4 4Mb Asynchronous SRAM
Giga Semiconductor
GS74104AGJ Datasheet PDF : 11 Pages
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GS74104ATP/J
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
Output Leakage
Current
I
LO
Output High Voltage
V
OH
Output Low Voltage
V
OL
V
IN
= 0 to V
DD
Output High Z
V
OUT
= 0 to V
DD
I
OH
= –4mA
I
LO
= +4mA
– 1 uA
–1 uA
2.4
—
1 uA
1 uA
—
0.4 V
Power Supply Currents
Parameter Symbol
Operating
Supply
I
DD
Current
Standby
Current
I
SB1
Standby
Current
I
SB2
Test Conditions
CE
≤
V
IL
All other inputs
≥
V
IH
or
≤
V
IL
Min. cycle time
I
OUT
= 0 mA
CE
≥
V
IH
All other inputs
≥
V
IH
or
≤
V
IL
Min. cycle time
CE
≥
V
DD
- 0.2V
All other inputs
≥
V
DD
- 0.2V or
≤
0.2V
0 to 70°C
8 ns
10 ns
120 mA 95 mA
30 mA
25 mA
10 mA
12 ns
85 mA
22 mA
–40 to 85°C
8 ns
10 ns
12 ns
130 mA 105 mA 95 mA
40 mA
35 mA
32 mA
20 mA
Rev: 1.06 6/2006
4/11
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
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