2SB1558 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1558 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
2SB1558
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)GEO Collector-Emitter Breakdown Voltage lc= -50mA; ls= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -7A; IB= -7mA
VBE(on) Base-Emitter On Voltage
lc= -7A; VCE= -5V
ICBO
Collector Cutoff Current
VCB=-140V;IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
riFE-i
DC Current Gain
lc= -7A; VCE= -5V
hFE-2
DC Current Gain
lc=-12A;VCE=-5V
COB
Collector Output Capacitance
lE=0;VCB=-10V;f= 1MHz
fr
Current-Gain—Bandwidth Product
lc=-1A;VCE=-5V
MIN TYP. MAX UNIT
-140
V
-2.5
V
-3.0
V
-5.0 u A
-5.0 M A
5000
30000
2000
170
pF
30
MHz
Classifications
A
B
C
5000-12000 9000-18000 15000-30000
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