B772 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
B772 Datasheet PDF : 5 Pages
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DATA SHEET
PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3 W
audio amplifier, voltage regulator, DC-DC converter and relay driver.
FEATURES
• Low saturation voltage
VCE(sat) ≤ −0.5 V (IC = −2.0 A, IB = −0.2 A)
• Excellent hFE linearity and high hFE
hFE2 = 60 to 400 (VCE = −2.0 V, IC = −1.0 A)
• Less cramping space required due to small and thin package (TO-
126 (MP-5)) and reducing the trouble for attachment to a radiator.
No insulator bushing required.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
Junction Temperature
−55 to +150°C
150°C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Maximum Voltages and Currents (TA = 25°C)
VCBO
Collector to Base Voltage
VCEO
Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC(DC)
Collector Current (DC)
IC(pulse) Note Collector Current (pulse)
Note Pulse Test PW ≤ 350 μs, Duty Cycle ≤ 2%
1.0 W
10 W
−40 V
−30 V
−5.0 V
−3.0 A
−7.0 A
<R>
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
DC Current Gain
DC Current Gain
SYMBOL
hFE1
hFE2
TEST CONDITIONS
VCE = −2.0 V, IC = −20 mA Note
VCE = −2.0 V, IC = −1.0 A Note
Gain Bandwidth Product
fT
VCE = −5.0 V, IC = −0.1 A
Output Capacitance
Cob
VCB = −10 V, IE = 0 A, f = 1.0 MHz
Collector Cutoff Current
ICBO
VCB = −30 V, IE = 0 A
Emitter Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
VEB = −3.0 V, IC = 0 A
IC = −2.0 A, IB = −0.2 A Note
IC = −2.0 A, IB = −0.2 A Note
Note Pulse Test: PW ≤ 350 μs, Duty Cycle ≤ 2%
CLASSIFICATION OF hFE2
Rank
Range
R
60 to 120
Q
100 to 200
P
160 to 320
Remark Test Conditions: VCE = −2.0 V, IC = −1.0 A
E
200 to 400
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2±0.2
2.8 MAX.
12 3
12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base
MIN.
30
60
TYP.
220
160
80
55
−0.3
−1.0
MAX.
400
−1.0
−1.0
−0.5
−2.0
UNIT
MHz
pF
μA
μA
V
V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17118EJ3V0DS00 (3rd edition)
Date Published April 2008 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004
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