BCY78-X View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BCY78-X Datasheet PDF : 2 Pages
| |||
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
PNP SILICON TRANSISTOR
JEDECTO-18CASE
, Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
'c
Collector Current (Peak)
'CM
Base Current (Peak)
IBM
Power Dissipation
PD
Power Dissipation(Tc=25°C)
PD
Operating and Storage
Junction Temperature
TJ>Tstg
Thermal Resistance
0JA
Thermal Resistance
©JC
BCY78
32
32
5.0
100
200
200
340
1.0
BCY79
45
45
-65 to +200
450
150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
'CBO
'CBO
'EBO
VCB= Ra*ed VCBO
VCB= Rated VCBO, TA=1 50°C
vEB=5.ov
BVcBO
lc=10|JA (BCY78)
BVCBO
IC=10|JA (BCY79)
BVCEO
lc=2.0mA (BCY78)
BVCEO
lc=2-OmA (BCY79)
BVEBO
lE=1.0pA
VCE(SAT)
lc=10mA, !B=250uA
VCE(SAT)
lc=100mA, !B=2.5mA
VBE(SAT)
lc=10mA, !B=250uA
VBE(SAT)
lc=100mA, !B=2,5mA
VBE(ON)
VCE=5.0V, !C=2.0mA
MIN
32
45
32
45
5.0
0.60
0.70
0.60
MAX
15
10
20
0.25
0.80
0.85
1.20
0.75
SYMBOL
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=5.0V, lc=10uA
VCE=5.0V, lC=2.0mA
VCE=1.0V, lc=10mA
VCE=1.0V, lc=100mA
BCY78-VII
BCY79-VII
MIN MAX
140 TYP
120 220
80
40
BCY78-VIII
BCY79-VIII
MIN MAX
30
180 310
120 400
45
BCY78-IX
BCY79-IX
MIN MAX
40
250 460
160 630
60
BCY78-X
BCY79-X
MIN MAX
100
380 630
•240 1000
60
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
uA
nA
V
V
V
V
V
V
V
V
V
V
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